Part Number Hot Search : 
MC74VHC1 ST75C176 EN29LV 25L20 AZ770 FW231 GP10G LPS62
Product Description
Full Text Search
 

To Download XD1004-BD-000V Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  mimix broadband?s 10.0-40.0 ghz gaas mmic distributed amplifier has a small signal gain of 17.0 db with a noise figure of 5.0 db. this mmic uses mimix broadband?s 0.15 m gaas phemt device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. the chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. this device is well suited for microwave, millimeter-wave, wideband military, and fiber optic applications. 10.0-40.0 ghz gaas mmic distributed amplifier absolute maximum ratings page 1 of 6 features ultra wide band driver amplifier self biased architecture 17.0 db small signal gain 5.0 db noise figure 100% on-wafer rf, dc and output power testing 100% visual inspection to mil-std-883 method 2010 general description supply voltage (vd) supply current (id) input power (pin) storage temperature (tstg) operating temperature (ta) channel temperature (tch) +6.0 vdc 175 ma +17 dbm -65 to +165 o c -55 to mttf table mttf table chip device layout (2) channel temperature affects a device's mttf. it is recommended to keep channel temperature as low as possible for maximum life. 2 frequency range (f ) input return loss (s11) output return loss (s22) small signal gain (s21) gain flatness ( s21) reverse isolation (s12) noise figure (nf) output power for 1 db compression point (p1db) 1 drain bias voltage (vd) supply current (id) (vd=5.0v) electrical characteristics (ambient temperature t = 25 o c) parameter units ghz db db db db db db dbm vdc ma min. 10.0 - - - - - - - - - typ. - 7.0 12.0 17.0 +/-2.5 30.0 5.0 tbd +5.0 115 max. 40.0 - - - - - - - +5.5 145 (1) measured using constant current. 2 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. december 2006 - rev 19-dec-06 d1004-bd xd1004-bd
page 2 of 6 distributed amplifier measurements 10.0-40.0 ghz gaas mmic distributed amplifier mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. d1004-bd december 2006 - rev 19-dec-06 xd1004-bd vd=see legend, id=see legend 2 4 6 8 10 12 14 16 18 20 22 8 1012141618202224262830323436384042444648 frequency (ghz) gain (db) vd=3.0v, id=100 ma vd=4.0v, id=120 ma vd=5.0v, id=115 ma xd1004-bd vd=see legend, id=see legend -80 -70 -60 -50 -40 -30 -20 -10 0 8 1012141618202224262830323436384042444648 frequency (ghz) reverse isolation (db) vd=3.0v, id=100 ma vd=4.0v, id=120 ma vd=5.0v, id=115 ma xd1004-bd vd=see legend, id=see legend -35 -30 -25 -20 -15 -10 -5 0 8 1012141618202224262830323436384042444648 frequency (ghz) input return loss (db) vd=3.0v, id=100 ma vd=4.0v, id=120 ma vd=5.0v, id=115 ma xd1004-bd vd=see legend, id=see legend -40 -35 -30 -25 -20 -15 -10 -5 0 8 1012141618202224262830323436384042444648 frequency (ghz) output return loss (db) vd=3.0v, id=100 ma vd=4.0v, id=120 ma vd=5.0v, id=115 ma xd1004-bd vd=see legend, id=see legend 0 1 2 3 4 5 6 7 8 9 10 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) noise figure (db) vd=3.0v, id=100 ma vd=4.0v, id=120 ma vd=5.0v, id=115 ma xd1004-bd vd=5.0, id=115 ma 0 1 2 3 4 5 6 7 8 9 10 8 10121416182022242628303234363840 frequency (ghz) noise figure (db)
page 3 of 6 s-parameters 10.0-40.0 ghz gaas mmic distributed amplifier mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. d1004-bd december 2006 - rev 19-dec-06 typcial s-parameter data for xd1004-bd vd=5.0 v id=115 ma frequency s11 s11 s21 s21 s12 s12 s22 s22 (ghz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 8.0 0.266 -84.45 2.817 79.53 0.0028 -71.28 0.329 75.78 9.0 0.327 -91.33 3.905 52.25 0.0029 -91.04 0.270 55.13 10.0 0.377 -101.79 5.149 25.97 0.0041 -105.02 0.255 34.10 11.0 0.424 -115.11 6.898 -6. 89 0.0054 -143.98 0.287 3.96 12.0 0.433 -126.57 8.344 -34.9 9 0.0052 -164.64 0.332 -21.03 13.0 0.412 -135.70 9.429 -64.24 0.0036 167.86 0.374 -46.40 14.0 0.409 -139.41 10.013 -92.80 0.0040 162.52 0.415 -71.95 15.0 0.408 -144.24 9.785 -120. 19 0.0027 128.36 0.406 -94.54 16.0 0.425 -148.34 9.206 -143. 62 0.0002 108.13 0.392 -112.14 17.0 0.443 -158.58 8.446 -169. 45 0.0024 -117.53 0.362 -132.18 18.0 0.429 -168.79 7.880 172.6 5 0.0017 -170.59 0.317 -145.22 19.0 0.393 -178.03 7.447 156 .62 0.0019 131.67 0.275 -156.40 20.0 0.351 174.97 7.231 141.98 0.0016 -20.62 0.242 -163.29 21.0 0.302 165.61 7.260 126.80 0.0029 -73.56 0.212 -171.23 22.0 0.223 159.38 7.405 111.79 0.0053 -69.71 0.176 -174.25 23.0 0.109 167.48 7.721 91.59 0.0082 -83.98 0.141 -174.45 24.0 0.082 -136.03 7.961 73.39 0.0129 -96.11 0.114 -172.92 25.0 0.177 -104.33 8.048 54.71 0.0169 -112.12 0.095 -163.22 26.0 0.308 -108.68 8.049 35.90 0.0204 -129.34 0.109 -145.40 27.0 0.414 -122.58 7.843 16.71 0.0216 -137.60 0.128 -147.14 28.0 0.488 -134.12 7.618 -2.03 0.0250 -148.72 0.141 -150.12 29.0 0.545 -149.53 7.229 -24.45 0.0282 -160.89 0.156 -159.55 30.0 0.563 -160.84 6.955 -41.89 0.0289 -170.71 0.155 -170.40 31.0 0.551 -170.23 6.762 -59.4 0 0.0302 -176.93 0.141 179.45 32.0 0.514 -179.06 6.558 -76.39 0.0314 175.02 0.118 170.74 33.0 0.473 175.85 6.405 -93.81 0.0327 168.19 0.092 165.96 34.0 0.430 171.06 6.263 -111.5 1 0.0332 159.36 0.073 160.02 35.0 0.371 163.46 6.137 -134.0 9 0.0336 145.03 0.064 158.77 36.0 0.324 159.72 6.172 -152.8 4 0.0297 132.80 0.064 152.46 37.0 0.268 149.53 6.316 -172.8 7 0.0267 118.95 0.090 132.61 38.0 0.156 127.96 6.684 163.95 0.0194 98.26 0.146 98.18 39.0 0.111 -1.01 6.681 134.93 0.0087 27.65 0.263 58.18 40.0 0.478 -67.43 6 .830 98.74 0.0160 -109.83 0.405 14.95 41.0 0.733 -116.92 4.453 49.92 0.0280 -154.33 0.449 -29.19 42.0 0.784 -134.69 2.919 24.62 0.0329 -165.52 0.450 -49.46 43.0 0.807 -147.18 1.993 4.19 0.0385 -178.14 0.454 -64.80 44.0 0.819 -158.53 1.406 -13.99 0.0396 163.90 0.437 -76.65 45.0 0.818 -165.72 1.022 -29.20 0.0364 161.74 0.419 -83.59 46.0 0.814 -173.65 0.808 -42.51 0.0368 160.26 0.430 -83.85 47.0 0.786 175.95 0.657 -60.8 2 0.0399 150.91 0.455 -95.96 48.0 0.760 165.30 0.665 -75.1 4 0.0353 138.11 0.451 -98.88
1 2 3 vd rf in rf out 1 2 3 1.250 (0.049) 1.102 (0.043) 1.000 (0.039) 0.0 0.0 1.070 (0.042) 0.820 (0.032) page 4 of 6 mechanical drawing bias arrangement bypass capacitors - see app n ote [2] 10.0-40.0 ghz gaas mmic distributed amplifier (note: engineering designator is 22dsba0423) units: millimeters (inches) bond pad dimensions are shown to center of bond pad. thickness: 0.110 +/- 0.010 (0.004 3 +/- 0.0004), backside is ground, bond pad/backside metallization: gold all bond pads are 0.100 x 0.100 (0.004 x 0.004). bond pad centers are approximately 0.109 (0.004) from the edge of the chip. dicing tolerance: +/- 0.005 (+/- 0.0002). approximate weight: 0.775 mg. bond pad #1 (rf in) bond pad #2 (rf out) bond pad # 3 ( v d) mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. d1004-bd xd1004-bd xd1004-bd december 2006 - rev 19-dec-06
page 5 of 6 10.0-40.0 ghz gaas mmic distributed amplifier app note [1] biasing - as shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain bias. bias is nominally vd=5v, id=115 ma. app note [2] bias arrangement - each dc pad (vd) needs to have dc bypass capacitance (~100-200 pf) as close to the device as possible. additional dc bypass capacitance (~0.01 uf) is also recommended. mttf graphs mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. d1004-bd december 2006 - rev 19-dec-06 these numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricati ng foundry. xd1004-bd vd=5.0 v id=115 ma 1.00e+05 1.00e+06 1.00e+07 1.00e+08 1.00e+09 55 65 75 85 95 105 115 125 backplate temperature (deg c) mttf (hours) xd1004-bd vd=5.0 v id=115 ma 1.00e+00 1.00e+01 1.00e+02 1.00e+03 1.00e+04 55 65 75 85 95 105 115 125 backplate temperature (deg c) fits xd1004-bd vd=5.0 v id=115 ma 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 55 65 75 85 95 105 115 125 backplate temperature (deg c) rth (deg c/w) xd1004-bd vd=5.0 v id=115 ma 100 110 120 130 140 150 160 170 180 190 200 55 65 75 85 95 105 115 125 backplate temperature (deg c) tch (deg c)
page 6 of 6 handling and assembly information 10.0-40.0 ghz gaas mmic distributed amplifier mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. d1004-bd part number for ordering description caution! - mimix broadband mmic products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: do not ingest. do not alter the form of this product into a gas , powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. life support policy - mimix broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president and general counsel of mimix broadband. as used herein: (1) life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to aff ect its safety or effectiveness. esd - gallium arsenide (gaas) devices are susceptible to electrostatic and mechanical damage. die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. die attachment - gaas products from mimix broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. microstrip substrates should be brought as close to the die as possible. the mounting surface should be clean and flat. if using conductive epoxy, recommended epoxies are tanaka ts3332ld, die mat dm6030hk or dm6030hk-pt cured in a nitrogen atmosphere per manufacturer's cure schedule. apply epoxy sparingly to avoid getting any on to the top surface of the die. an epoxy fillet should be visible around the total die periphery. for additional information please see the mimix "epoxy specifications for bare die" application note. if eutectic mounting is preferred, then a fluxless gold-tin (ausn) preform, appr oximately 0.001 2 thick, placed between the die and the attachment surface should be used. a die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. he gold-t in eutectic (80% au 20% sn) has a melting point of approximately 280 oc (note: gold germanium should be avoided). the work station temperature should be 310 oc +/- 10 oc. exposure to these extreme temperatures should be kept to minimum. the collet should be heated, and the die pre-heated to avoid excessive thermal shock. avoidance of air bridges and force impact are critical during placement. wire bonding - windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. the recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize rf port bond inductance. gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for dc bias connections. aluminum wire should be avoided. thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. bond force, time and ultrasonics are all critical parameters . bonds should be made from the bond pads on the die to the package or substrate. all bonds should be as short as possible. XD1004-BD-000V rohs compliant die packed in vacuum release gel packs xd1004-bd-ev1 xd1004-bd evaluation module december 2006 - rev 19-dec-06


▲Up To Search▲   

 
Price & Availability of XD1004-BD-000V

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X